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FDG315 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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FDG315 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDG315N Rev. C Typical Characteristics (continued) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.005 0.01 0.05 0.1 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R =260°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 0 6 12 18 24 30 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA= 260 oC/W TA= 25 oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0 2 4 6 8 10 012 34 5 Qg, GATE CHARGE (nC) I D = 2A V DS = 5V 10V 15V 0 50 100 150 200 250 300 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS CRSS C OSS f = 1MHz V GS = 0 V 0.01 0.1 1 10 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 10ms 1ms RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 260 oC/W TA = 25 oC |
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