FDG315N Rev. C

Figure 7. Gate-Charge Characteristics.

Figure 8. Capacitance Characteristics.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient themal response will change depending on the circuit board design.

0.0001

0.001

0.01

0.1

1

10

100

300

0.005

0.01

0.05

0.1

0.5

1

t , TIME (sec)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

1

2

R

(t) = r(t) * R

R

=260°C/W

θJA

θJA

θJA

T - T

= P * R

(t)

A

J

P(pk)

0

6

12

18

24

30

0.0001

0.001

0.01

0.1

1

10

100

1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0

2

4

6

8

10

012

34

5

I

V

10V

15V

0

50

100

150

200

250

300

0

5

10

15

20

25

30

C

ISS

C

OSS

f = 1MHz

V

0.01

0.1

1

10

0.1

1

10

100

DC

10s

1s

100ms

10ms

1ms

SINGLE PULSE