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FDG326 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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FDG326 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page January 2001 2001 Fairchild Semiconductor Corporation FDG326P Rev D(W) FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • –1.5 A, –20 V. RDS(ON) = 140 m Ω @ V GS = –4.5 V RDS(ON) = 180 m Ω @ V GS = –2.5 V RDS(ON) = 250 m Ω @ V GS = –1.8 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package SC70-6 3 5 6 4 1 2 3 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ± 8 V ID Drain Current – Continuous (Note 1a) –1.5 A – Pulsed –6 Power Dissipation for Single Operation (Note 1a) 0.75 W PD (Note 1b) 0.48 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Note 1b) 260 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .26 FDG326P 7’’ 8mm 3000 units |
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