March 1998

FDN337N

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

Symbol

Parameter

FDN337N

Units

V

DSS

Drain-Source Voltage

30

V

V

GSS

Gate-Source Voltage - Continuous

±8

V

I

D

Drain/Output Current - Continuous

2.2

A

- Pulsed

10

P

D

Maximum Power Dissipation

(Note 1a)

0.5

W

(Note 1b)

0.46

T

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

250

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

75

°C/W

FDN337N Rev.C

2.2 A, 30 V, R

R

Industry standard outline SOT-23 surface mount

package using proprietary SuperSOT

superior thermal and electrical capabilities.

High density cell design for extremely low R

Exceptional on-resistance and maximum DC current

capability.

SuperSOT

power field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance. These devices are particularly suited for

low voltage applications in notebook computers, portable

phones, PCMCIA cards, and other battery powered circuits

where fast switching, and low in-line power loss are needed

in a very small outline surface mount package.

SOT-23

SuperSOT

SOIC-16

SO-8

SOT-223

SuperSOT

G

D

S

SuperSOT -3

TM

337

D

S

G

© 1998 Fairchild Semiconductor Corporation