FCB36N60N datasheet(1/8 Pages) FAIRCHILD

부품명	FCB36N60N

상세설명	N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓

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제조업체	FAIRCHILD [Fairchild Semiconductor]

홈페이지	http://www.fairchildsemi.com

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FCB36N60N Rev. C0

www.fairchildsemi.com

1

March 2013

FCB36N60N

N-Channel SupreMOS® MOSFET

600 V, 36 A, 90 m

Ω

Features

•RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A

• Ultra low gate charge (Typ. Qg = 86 nC)

• Low effective output capacitance (Typ. Coss.eff = 361 pF)

• 100% avalanche tested

• RoHS compliant

Applications

• Solar Inverter

• AC-DC Power Supply

Description

The SupreMOS

®

MOSFET is Fairchild Semiconductor

®

’s next-

generation of high voltage super-junction (SJ) technology

employing a deep trench filling process that differentiate it from

the conventional MOSFETs. This advanced technology and pre-

cise process control provide lowest Rsp on-resistance, superior

switching performance and ruggedness. SupreMOS MOSFET is

suitable for high frequency switching power converter applica-

tions such as PFC, server/telecom power, FPD TV power, ATX

power and industrial power applications.

D

G

S

D

S

G

MOSFET Maximum Ratings T

C = 25

oC unless otherwise noted*

Thermal Characteristics

Symbol

Parameter

FCB36N60N

Unit

VDSS

Drain to Source Voltage

600

V

VGSS

Gate to Source Voltage

±30

V

ID

Drain Current

-Continuous (TC = 25

oC)

36

A

-Continuous (TC = 100

oC)

22.7

IDM

Drain Current

- Pulsed

(Note 1)

108

A

EAS

Single Pulsed Avalanche Energy

(Note 2)

1800

mJ

IAR

Avalanche Current

12

A

EAR

Repetitive Avalanche Energy

3.12

mJ

dv/dt

MOSFET dv/dt Ruggedness

100

V/ns

Peak Diode Recovery dv/dt

(Note 3)

20

V/ns

PD

Power Dissipation

(TC = 25

oC)

312

W

- Derate above 25oC2.6

W/oC

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

oC

TL

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

oC

Symbol

Parameter

FCB36N60N

Unit

RθJC

Thermal Resistance, Junction to Case

0.4

oC/W

RθJA*

Thermal Resistance, Junction to Ambient *

40

RθJA

Thermal Resistance, Junction to Ambient

62.5

*Drain current limited by maximum junction temperature

*When mounted on the minmium pad size recommended (PCB Mount)

유사한 부품 번호 - FCB36N60N

제조업체	부품명	데이터시트	상세설명
Fairchild Semiconductor	FCB36N60N	239Kb / 8P	N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓
Inchange Semiconductor ...	FCB36N60N	333Kb / 2P	isc N-Channel MOSFET Transistor
Fairchild Semiconductor	FCB36N60NTM	239Kb / 8P	N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓

More results

유사한 설명 - FCB36N60N

제조업체	부품명	데이터시트	상세설명
Fairchild Semiconductor	FCB36N60NTM	239Kb / 8P	N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓
	FCPF7N60NT	388Kb / 10P	N-Channel SupreMOS짰 MOSFET 600 V, 6.8 A, 520 m廓
	FCI25N60N	364Kb / 8P	N-Channel SupreMOS짰 MOSFET 600 V, 25 A, 125 m廓
Diodes Incorporated	FCP25N60N	460Kb / 8P	N-Channel SupreMOS짰 MOSFET 600 V, 25 A, 125 m廓
Renesas Technology Corp	N0439N	221Kb / 7P	N-channel MOSFET 40 V, 90 A, 3.3 m廓
Fairchild Semiconductor	FDD86102	396Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 36 A, 24 m廓
	FCD380N60E	205Kb / 9P	N-Channel SuperFET짰 II MOSFET 600 V, 10.2 A, 380 m廓
	FDMC86248	262Kb / 7P	N-Channel Power Trench짰 MOSFET 150 V, 13 A, 90 m廓
Kersemi Electronic Co.,...	KSMU5N60C	3Mb / 8P	N-Channel MOSFET 600 V, 2.8 A, 2.5 廓
Kersemi Electronic Co.,...	KSMD5N60C	3Mb / 8P	N-Channel MOSFET 600 V, 2.8 A, 2.5 廓

More results

FCB36N60N 데이터시트(PDF) 1 Page - Fairchild Semiconductor

FCB36N60N 데이터시트(HTML) 1 Page - Fairchild Semiconductor

유사한 부품 번호 - FCB36N60N

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