FDN360P Rev. D

FDN360P

General Description

This P-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process

that has been especially tailored to minimize on-state

resistance and yet maintain superior switching

performance.

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

Applications

February 1999

Features

DS(on)

= 0.080

Ω @ V

GS

= -10 V

R

DS(on)

= 0.125

Ω @ V

GS

= -4.5 V.

low R

©1999 Fairchild Semiconductor Corporation

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Drain Current

- Continuous

(Note 1a)

-2

A

- Pulsed

-20

Power Dissipation for Single Operation

(Note 1a)

0.5

W

(Note 1b)

0.46

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

75

°C/W

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

360

FDN360P

7’’

8mm

3000 units

G

D

S

SuperSOT -3

TM

D

S

G