FDS6685 Rev. B

Figure 7. Gate-Charge Characteristics

Figure 8. Capacitance Characteristics

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum

Power Dissipation

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient themal response will change depending on the circuit board design.

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (s e c )

1

S i n g l e P u l s e

D = 0.5

0.1

0.05

0.02

0.0 1

0.2

D u t y C y c l e, D = t /t

1

2

R

(t) = r(t) * R

R

= 125°C/W

θJA

θJA

θJA

T - T = P * R

(t)

A

J

P(pk )

0

500

1000

1500

2000

2500

0

5

10

15

20

25

30

f = 1 MHz

0

2

4

6

8

10

0

5

10

15

20

25

30

35

-10V

-15V

0.01

0.1

1

10

100

0.1

1

10

100

DC

10s

1s

100ms

10ms

1ms

100

µs

SINGLE PULSE

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

o

C/W

o

C