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SST39SF020A-70-4I-NHE 데이터시트(PDF) 1 Page - Microchip Technology |
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SST39SF020A-70-4I-NHE 데이터시트(HTML) 1 Page - Microchip Technology |
1 / 28 page ©2013 Silicon Storage Technology, Inc. DS25022B 04/13 Data Sheet www.microchip.com 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Features • Organized as 128K x8 / 256K x8 / 512K x8 • Single 4.5-5.5V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 14 MHz) – Active Current: 10 mA (typical) – Standby Current: 30 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Fast Read Access Time: – 55 ns – 70 ns • Latched Address and Data • Automatic Write Timing – Internal VPP Generation • Fast Erase and Byte-Program – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39SF010A 4 seconds (typical) for SST39SF020A 8 seconds (typical) for SST39SF040 • End-of-Write Detection – Toggle Bit – Data# Polling • TTL I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm) – 32-pin PDIP • All devices are RoHS compliant The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose Flash (MPF) devices manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnel- ing injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories |
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