FDS9431A Rev. A2

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient themal response will change depending on the circuit board design.

0

1

2

3

4

5

02

46

8

Qg, GATE CHARG E (nC)

-15V

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (s e c )

1

S i n g l e P u l s e

D = 0.5

0.1

0.05

0.02

0.0 1

0.2

D u t y C y c l e, D = t /t

1

2

R

(t) = r(t) * R

R

= 125°C/W

θJA

θJA

θJA

T - T = P * R

(t)

A

J

P(pk )

0.1

0.2

0.5

1

2

5

10

20

50

100

200

500

1000

2000

-V

, D R AIN T O SOU R CE VOLTA GE (V)

DS

Ciss

f = 1 M Hz

V

= 0 V

G S

Coss

Crss

0.1

0 .3

1

2

5

10

30

0. 01

0. 05

0.5

3

10

50

- V

, DR AIN -SO UR C E VOLTAGE (V)

RD

S( O

N ) L

I M

IT

A

DC

DS

1s

100

m s

10 m

s

1m

s

10 s

V

= -4.5V

SING L E PUL SE

R

= 135 °C/W

T = 2 5°C

θJA

GS

A

100

us

V

SINGLE PULSE

T