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FDS9936A 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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FDS9936A 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDS9936A Rev.B 0 2 4 6 8 10 12 14 0 2 4 6 8 10 Q , GATE CHARGE (nC) g I = 5.5A D V = 5V DS 10V 15V 0.1 0.2 0.5 1 2 5 10 30 50 0.01 0.05 0.1 0.5 1 2 5 10 30 50 V , DRAIN-SOURCE VOLTAGE (V) RDS(ON) LIMIT A DC DS 1s 100ms 10ms 1ms 10s V =10V SINGLE PULSE R = 135°C/W T = 25°C θJA GS A 100us Figure 10. Single Pulse Maximum Power Dissipation. 0.1 0.2 0.5 1 2 5 10 30 30 50 100 200 500 1000 V , DRAIN TO SOURCE VOLTAGE (V) Ciss f = 1 MHz V = 0 V GS Coss Crss DS Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. Typical Electrical Characteristics (continued) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 0.01 0.1 0.5 1 10 50 100 300 0 5 10 15 20 25 30 SINGLE PULSE TIME (SEC) SINGLE PULSE R =135° C/W T = 25°C θJA A 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t /t 1 2 R (t) = r(t) * R R =135 °C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 |
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