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FDT434P 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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FDT434P 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDT434P Rev. C1 (W) Typical Characteristics 0 3 6 9 12 15 0 1 2 3 4 5 Q , GATE CHARGE(nC) g V = -5V DS -1 0V I = -6.0A D -1 5V 0.10.3 1 3 10 20 50 100 200 400 1000 2500 -V , DRAIN TO SOURCEVOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -V DS, DRAIN-SOURCE VOLTAGE (V) VGS= -4.5V SINGLE PULSE RθJA= 42 oC/W TA= 25 oC RDS(ON) LIMIT DC 1s 10s 100ms 10ms 100 µs 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 110 o C/W TA = 25 oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 110 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 Single Pulse 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. |
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