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FGB30N6S2D 데이터시트(PDF) 4 Page - Fairchild Semiconductor

부품명 FGB30N6S2D
상세설명  600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGB30N6S2D 데이터시트(HTML) 4 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves (Continued)
200
ICE, COLLECTOR TO EMITTER CURRENT (A)
100
250
0
5
10152025
0
350
300
50
400
TJ = 125
oC, V
GE = 10V, VGE = 15V
TJ = 25
oC, V
GE = 10V, VGE = 15V
150
RG = 10Ω, L = 500mH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
100
300
0
600
5
10
152025
0
500
400
200
RG = 10Ω, L = 500mH, VCE = 390V
TJ = 125
oC, V
GE = 10V, VGE = 15V
TJ = 25
oC, V
GE = 10V, VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
6
8
12
14
5
10152025
0
16
4
2
10
RG = 10Ω, L = 500µH, VCE = 390V
TJ = 25
oC, T
J = 125
oC, V
GE = 10V
TJ = 25
oC, T
J = 125
oC, V
GE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
20
10
30
25
510
15
20
25
0
15
TJ = 25
oC, V
GE = 10V, VGE =15V
TJ = 125
oC, V
GE = 15V, VGE = 10V
RG = 10Ω, L = 500mH, VCE = 390V
5
20
30
40
50
60
70
80
90
0
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
RG = 10Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
60
80
100
10
5
152025
0
120
RG = 10Ω, L = 500µH, VCE = 390V
TJ = 125
oC, V
GE = 10V OR 15V
TJ = 25
oC, V
GE = 10V OR 15V


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