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93AA76A 데이터시트(PDF) 6 Page - Microchip Technology

부품명 93AA76A
상세설명  8K Microwire Compatible Serial EEPROM
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제조업체  MICROCHIP [Microchip Technology]
홈페이지  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

93AA76A 데이터시트(HTML) 6 Page - Microchip Technology

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93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C
DS21796M-page 6
 2003-2012 Microchip Technology Inc.
2.4
Erase
The ERASE instruction forces all data bits of the
specified address to the logical ‘1’ state. The rising
edge of CLK before the last address bit initiates the
write cycle.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
FIGURE 2-1:
ERASE TIMING
2.5
Erase All (ERAL)
The Erase All (ERAL) instruction will erase the entire
memory array to the logical ‘1’ state. The ERAL cycle
is identical to the erase cycle, except for the different
opcode. The ERAL cycle is completely self-timed. The
rising edge of CLK before the last data bit initiates the
write cycle. Clocking of the CLK pin is not necessary
after the device has entered the ERAL cycle.
The DO pin indicates the Ready/Busy status of the
device, if CS is brought high after a minimum of 250 ns
low (TCSL).
VCC must be
4.5V for proper operation of ERAL.
FIGURE 2-2:
ERAL TIMING
Note:
After the Erase cycle is complete, issuing
a Start bit and then taking CS low will clear
the Ready/Busy status from DO.
CS
CLK
DI
DO
TCSL
Check Status
11
1
AN
AN-1
AN-2
•••
A0
TSV
TCZ
Busy
Ready
High-Z
TWC
High-Z
Note:
After the ERAL command is complete,
issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
CS
CLK
DI
DO
TCSL
Check Status
10
0
1
0
x
•••
x
TSV
TCZ
Busy
Ready
High-Z
TEC
High-Z


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