REV. C

–4–

AD8011

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection. Although the

AD8011 features proprietary ESD protection circuitry, permanent damage may occur on devices

subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended

to avoid performance degradation or loss of functionality.

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V

Internal Power Dissipation

2

Plastic DIP Package (N) . . . . . . . Observe Derating Curves

Small Outline Package (R) . . . . . . Observe Derating Curves

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .

±2.5 V

Output Short-Circuit Duration

. . . . . . . . . . . . . . . . . .Observe Power Derating Curves

Storage Temperature Range (N, R) . . . . . . . –65

°C to +125°C

Operating Temperature Range (A Grade) . . . –40

°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300

°C

NOTES

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

°C/W

°C/W

2.0

1.5

0.5

–50 –40 –30 –20 –10

0

10

20

30

40

50

60

70

80

90

AMBIENT TEMPERATURE ( C)

1.0

0

8-LEAD PLASTIC DIP PACKAGE

8-LEAD SOIC PACKAGE

Figure 3. Maximum Power Dissipation vs. Temperature

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8011

is limited by the associated rise in junction temperature. The

maximum safe junction temperature for plastic encapsulated

devices is determined by the glass transition temperature of the

plastic, approximately 150

°C. Exceeding this limit temporarily

may cause a shift in parametric performance due to a change in

the stresses exerted on the die by the package. Exceeding a

junction temperature of 175

°C for an extended period can result

in device failure.

While the AD8011 is internally short-circuit protected, this may

not be sufficient to guarantee that the maximum junction tem-

perature is not exceeded under all conditions. To ensure proper

operation, it is necessary to observe the maximum power derating

curves (shown in Figure 3).

0.01 F

0.01 F

10 F

10 F

1k

1k

1k

50

Figure 4. Test Circuit; Gain = +2

0.01 F

0.01 F

10 F

10 F

1k

1k

1k

52.3

Figure 5. Test Circuit; Gain = –1

ORDERING GUIDE

Temperature

Package

Package

Model

Range

Description

Option

AD8011AN

–40

°C to +85°C8-Lead PDIP

N-8

AD8011AR

–40

°C to +85°C

8-Lead SOIC

R-8

AD8011AR-REEL

–40

°C to +85°C

13" Tape and Reel

R-8

AD8011AR-REEL7

–40

°C to +85°C

7" Tape and Reel

R-8