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Si7620DN 데이터시트(PDF) 11 Page - Vishay Siliconix |
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Si7620DN 데이터시트(HTML) 11 Page - Vishay Siliconix |
11 / 13 page www.vishay.com 4 Document Number 71681 03-Mar-06 Vishay Siliconix AN822 CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 uses the same packaging technology and has been shown to have the same level of thermal perfor- mance while having a footprint that is more than 40 % smaller than the standard TSSOP-8. Recommended PowerPAK 1212-8 land patterns are provided to aid in PC board layout for designs using this new package. The PowerPAK 1212-8 combines small size with attrac- tive thermal characteristics. By minimizing the thermal rise above the board temperature, PowerPAK simplifies thermal design considerations, allows the device to run cooler, keeps rDS(ON) low, and permits the device to handle more current than a same- or larger-size MOS- FET die in the standard TSSOP-8 or SO-8 packages. Figure 5. Spreading Copper - Si7401DN 45 55 65 75 85 95 105 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Spreading Copper (sq. in.) 100 % 50 % 0 % Figure 6. Spreading Copper - Junction-to-Ambient Performance 50 60 70 80 90 100 110 120 130 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Spreading Copper (sq. in.) 100 % 0 % 50 % |
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