STP8NM50N datasheet(4/19 Pages) STMICROELECTRONICS

부품명	STP8NM50N

상세설명	N-channel 500 V, 0.73 廓 typ., 5 A MDmesh?줚I Power MOSFET in DPAK, TO-220 and IPAK packages

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Electrical characteristics

STD8NM50N, STP8NM50N, STU8NM50N

4/19

Doc ID 17413 Rev 6

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

500

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 500 V

VDS = 500 V, TC = 125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

± 100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 2.5 A

0.73

0.79

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-

364

33

1.2

-

pF

Coss(eq)

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance time

-

147.5

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

5.4

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 400 V, ID = 5 A,

VGS = 10 V

(see Figure 16)

-

14

3

7

-

nC

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