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TPS1120DG4 데이터시트(PDF) 6 Page - Texas Instruments |
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TPS1120DG4 데이터시트(HTML) 6 Page - Texas Instruments |
6 / 15 page TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED AUGUST 1995 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS† Table of Graphs FIGURE Drain current vs Drain-to-source voltage 3 Drain current vs Gate-to-source voltage 4 Static drain-to-source on-state resistance vs Drain current 5 Capacitance vs Drain-to-source voltage 6 Static drain-to-source on-state resistance (normalized) vs Junction temperature 7 Source-to-drain diode current vs Source-to-drain voltage 8 Static drain-to-source on-state resistance vs Gate-to-source voltage 9 Gate-to-source threshold voltage vs Junction temperature 10 Gate-to-source voltage vs Gate charge 11 – 5 – 4 – 2 – 1 0 – 3 0 – 1 – 2 – 3– 4– 5– 6 – 7 – 6 DRAIN CURRENT vs DRAIN-TO-SOURCE VOLTAGE – 7 – 8 – 9 – 10 VGS = – 6 V VDS – Drain-to-Source Voltage – V VGS = – 8 V VGS = – 7 V VGS = – 3 V VGS = – 4 V VGS = – 2 V VGS = – 5 V TJ = 25°C Figure 3 Figure 4 0 – 2 – 3 – 5 DRAIN CURRENT vs GATE-TO-SOURCE VOLTAGE – 7 – 1 – 4 – 6 VGS – Gate-to-Source Voltage – V TJ = 150°C TJ = 25°C TJ = – 40°C VDS = –10 V 0 – 5 – 4 – 2 – 1 – 3 – 7 – 6 † All characteristics data applies for each independent MOSFET incorporated on the TPS1120. |
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