IRF9362PBF datasheet(2/8 Pages) IRF

부품명	IRF9362PBF

상세설명	HEXFETPower MOSFET Industry-Standard SO-8 Package

Download	8 Pages

Scroll/Zoom	100%

제조업체	IRF [International Rectifier]

홈페이지	http://www.irf.com

Logo

2 / 8 page

IRF9362PbF

2

www.irf.com

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting TJ = 25°C, L = 4.6mH, RG = 25Ω, IAS = -6.4A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board.

Rθ is measured at TJ of approximately 90°C.

For DESIGN AID ONLY, not subject to production testing.

G

D

S

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

BVDSS

Drain-to-Source Breakdown Voltage

-30

–––

V

∆ΒVDSS/∆TJ

Breakdown Voltage Temp. Coefficient

–––

0.021

–––

V/°C

RDS(on)

–––

17.0

21.0

–––

25.7

32.0

VGS(th)

Gate Threshold Voltage

-1.3

-1.8

-2.4

V

VDS = VGS, ID = -25µA

∆VGS(th)

Gate Threshold Voltage Coefficient

–––

-5.8

–––

mV/°C

IDSS

Drain-to-Source Leakage Current

–––

-1.0

–––

-150

IGSS

Gate-to-Source Forward Leakage

–––

-100

Gate-to-Source Reverse Leakage

–––

100

gfs

Forward Transconductance

12

–––

S

Qg

Total Gate Charge

h

–––13–––

nC

VDS = -15V, VGS = -4.5V, ID = - 6.4A

Qg

Total Gate Charge

h

–––

26

39

Qgs

Gate-to-Source Charge

h

–––

3.8

–––

Qgd

Gate-to-Drain Charge

h

–––

6.3

–––

RG

Gate Resistance

h

–––17–––

Ω

td(on)

Turn-On Delay Time

–––

5.2

–––

tr

Rise Time

–––

5.9

–––

td(off)

Turn-Off Delay Time

–––

115

–––

tf

Fall Time

–––53–––

Ciss

Input Capacitance

–––

1300

–––

Coss

Output Capacitance

–––

250

–––

Crss

Reverse Transfer Capacitance

–––

170

–––

Avalanche Characteristics

Parameter

Units

EAS

Single Pulse Avalanche Energy

d

mJ

IAR

Avalanche Current

A

Diode Characteristics

Parameter

Min.

Typ.

Max.

Units

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

Ã

VSD

Diode Forward Voltage

–––

-1.2

V

trr

Reverse Recovery Time

–––

32

48

ns

Qrr

Reverse Recovery Charge

–––

20

30

nC

Thermal Resistance

Parameter

Units

RθJL

Junction-to-Drain Lead

g

RθJA

Junction-to-Ambient

f

Conditions

See Figs. 19a & 19b

Max.

94

-6.4

ƒ = 1.0kHz

VGS = 0V

VDS = -25V

VDS = -24V, VGS = 0V

Conditions

VGS = 0V, ID = -250µA

Reference to 25°C, ID = -1mA

VGS = -10V, ID = -8.0A e

VGS = -4.5V, ID = -6.4A e

m

Ω

µA

TJ = 25°C, IF = -2.0A, VDD = -24V

di/dt = 100/µs

e

TJ = 25°C, IS = -2.0A, VGS = 0V e

showing the

integral reverse

p-n junction diode.

MOSFET symbol

ID = -6.4A

RG = 6.0Ω

VDS = -10V, ID = -6.4A

VDS = -24V, VGS = 0V, TJ = 125°C

VDD = -30V, VGS = -10V e

ID = -1.0A

VDS = -15V

VGS = -20V

VGS = 20V

VGS = -10V

ns

pF

–––

Typ.

–––

Static Drain-to-Source On-Resistance

A

–––

-2.0

-64

nA

nC

°C/W

Max.

20

62.5

Typ.

–––

유사한 부품 번호 - IRF9362PBF

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRF9362PBF	276Kb / 8P	HEXFET Power MOSFET
	IRF9362PBF	292Kb / 8P	Industry-Standard SO-8 Package
	IRF9362PBF	292Kb / 8P	Industry-Standard SO-8 Package

More results

IRF9362PBF 데이터시트(PDF) 2 Page - International Rectifier

IRF9362PBF 데이터시트(HTML) 2 Page - International Rectifier

유사한 부품 번호 - IRF9362PBF

Html Pages

1 2 3 4 5 6 7 8

데이터시트 다운로드

링크 URL