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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TPIC6273DW 데이터시트(PDF) 3 Page - Texas Instruments |
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TPIC6273DW 데이터시트(HTML) 3 Page - Texas Instruments |
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3 / 15 page  TPIC6273 POWER LOGIC OCTAL D-TYPE LATCH SLIS011A – APRIL 1992 – REVISED OCTOBER 1995 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 schematic of inputs and outputs EQUIVALENT OF EACH INPUT TYPICAL OF ALL DRAIN OUTPUTS VCC Input GND GND DRAIN 45 V 12 V 25 V 12 V absolute maximum ratings over recommended operating case temperature range (unless otherwise noted)† Logic supply voltage, VCC (see Note 1) 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Logic input voltage range, VI – 0.3 V to 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power DMOS drain-to-source voltage, VDS (see Note 2) 45 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous source-drain diode anode current 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed source-drain diode anode current 2 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed drain current, each output, all outputs on, IDn, TA = 25°C (see Note 3) 750 mA . . . . . . . . . . . . . . . . . . . Continuous drain current, each output, all outputs on, IDn, TA = 25°C 250 mA . . . . . . . . . . . . . . . . . . . . . . . . . . Peak drain current single output, IDM,TA = 25°C (see Note 3) 2 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single-pulse avalanche energy, EAS (see Figure 4) 75 mJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Avalanche current, IAS (see Note 4) 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total power dissipation See Dissipation Rating Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating virtual junction temperature range, TJ –40 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg –65 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to GND. 2. Each power DMOS source is internally connected to GND. 3. Pulse duration ≤ 100 µs, duty cycle ≤ 2% 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 100 mH, IAS = 1 A (see Figure 4). DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 125°C POWER RATING DW 1125 mW 9.0 mW/ °C 225 mW N 1150 mW 9.2 mW/ °C 230 mW |
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