FM28V020 - 32Kx8 F-RAM

Document Number: 001-86204 Rev. *A

Page 2 of 16

Figure 1. Block Diagram

Pin Descriptions

Pin Name

Type

Pin Description

A(14:0)

Input

Address inputs: The 15 address lines select one of 32,768 bytes in the F-RAM array. The

address value is latched on the falling edge of /CE. Addresses A(2:0) are used for page

mode read and write operations.

/CE

Input

Chip Enable input: The device is selected and a new memory access begins on the falling

edge of /CE. The entire address is latched internally at this point.

/WE

Input

Write Enable: A write cycle begins when /WE is asserted. The rising edge causes the

FM28V020 to write the data on the DQ bus to the F-RAM array. The falling edge of /WE

latches a new column address for fast page mode write cycles.

/OE

Input

Output Enable: When /OE is low, the FM28V020 drives the data bus when valid data is

available. Deasserting /OE high tri-states the DQ pins.

DQ(7:0)

I/O

Data: 8-bit bi-directional data bus for accessing the F-RAM array.

VDD

Supply

Supply Voltage

VSS

Supply

Ground

Control

Logic

WE

A(14:3)

A(2:0)

I/O Latch & Bus Driver

OE

DQ(7:0)

4K x 64

F-RAM Array

A(14:0)

Column Decoder

. . .

CE