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SI2302ADS-T1-E3 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI2302ADS-T1-E3
상세설명  N-Channel 2.5-V (G-S) MOSFET
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Document Number: 71831
S11-2000-Rev. J, 10-Oct-11
Vishay Siliconix
Si2302ADS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; PW
≤ 300 µs, duty cycle ≤ 2 %.
b. Effective for production 10/04.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 10 µA
20
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 50 µA
0.65
0.95
1.2
Gate Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
0.1
µA
VDS = 20 V, VGS = 0 V, TJ = 55 °C
2.0
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
6
A
VDS ≥ 5 V, VGS = 2.5 V
4
Drain-Source On-Resistancea
RDS(on)
VGS = 4.5 V, ID = 3.6 A
0.045
0.060b
Ω
VGS = 2.5 V, ID = 3.1 A
0.070
0.115
Forward Transconductancea
gfs
VDS = 5 V, ID = 3.6 A
8
S
Diode Forward Voltage
VSD
IS = 0.94 A, VGS = 0 V
0.76
1.2
V
Dynamic
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 3.6 A
4.0
10
nC
Gate-Source Charge
Qgs
0.65
Gate-Drain Charge
Qgd
1.5
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
300
pF
Output Capacitance
Coss
120
Reverse Transfer Capacitance
Crss
80
Gate Resistance
Rg
f = 1 MHz
0.5
1
2
Ω
Switching
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 2.8 Ω
ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 6 Ω
715
ns
Rise Time
tr
55
80
Turn-Off DelayTime
td(off)
16
60
Fall Time
tf
10
25


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