전자부품 데이터시트 검색엔진 |
|
FQD20N06L 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
|
FQD20N06L 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ※ No t e s : 1 . Z θ JC(t ) = 3 . 2 8 ℃ /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC(t ) s i n g le p u ls e D= 0 . 5 0. 0 2 0. 2 0. 0 5 0. 1 0. 0 1 t 1 , S quar e W a v e P u l s e D u r a t i on [ s ec ] 25 50 75 100 125 150 0 5 10 15 20 T C, Case Temperature [ ℃] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 ※ Notes : 1. V GS = 10 V 2. I D = 8.6 A T J, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※Notes: 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ oC] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t 1 PDM t 2 Typical Characteristics (Continued) |
유사한 부품 번호 - FQD20N06L |
|
유사한 설명 - FQD20N06L |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |