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FQP12P10 데이터시트(PDF) 1 Page - Fairchild Semiconductor

부품명 FQP12P10
상세설명  100V P-Channel MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
QFETTM
Rev. B, August 2002
FQP12P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -11.5A, -100V, RDS(on) = 0.29Ω @VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175
°C maximum junction temperature rating
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQP12P10
Units
VDSS
Drain-Source Voltage
-100
V
ID
Drain Current
- Continuous (TC = 25°C)
-11.5
A
- Continuous (TC = 100°C)
-8.1
A
IDM
Drain Current
- Pulsed
(Note 1)
-46
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
370
mJ
IAR
Avalanche Current
(Note 1)
-11.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
-6.0
V/ns
PD
Power Dissipation (TC = 25°C)
75
W
- Derate above 25°C
0.5
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
°C
TL
Maximum lead temperature for soldering purposes,
1/8! from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
2.0
°C/W
RθCS
Thermal Resistance, Case-to-Sink
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
TO-220
FQP Series
GS
D
S
D
G


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