MRF154

2

MOTOROLA RF DEVICE DATA

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)

V(BR)DSS

125

—

—

Vdc

Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)

IDSS

—

—

20

mAdc

Gate–Body Leakage Current (VGS = 20 V, VDS = 0)

IGSS

—

—

5.0

µAdc

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)

VGS(th)

1.0

3.0

5.0

Vdc

Drain–Source On–Voltage (VGS = 10 V, ID = 40 A)

VDS(on)

1.0

3.0

5.0

Vdc

Forward Transconductance (VDS = 10 V, ID = 20 A)

gfs

16

20

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Ciss

—

1600

—

pF

Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Coss

—

950

—

pF

Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Crss

—

175

—

pF

FUNCTIONAL TESTS

Common Source Amplifier Power Gain

(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)

Gps

—

17

—

dB

Drain Efficiency

(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)

η

—

45

—

%

Intermodulation Distortion

(VDD = 50 V, Pout = 600 W (PEP),

f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 800 mA)

IMD(d3)

—

–25

—

dB

Figure 1. 30 MHz Test Circuit

C1, C3, C8 — Arco 469

C2 — 330 pF

C4 — 680 pF

C5, C19, C20 — 0.47

µF, RMC Type 2225C

C6, C7, C14, C15, C16 — 0.1

µF

C9, C10, C11 — 470 pF

C12 — 1000 pF

C13 — Two Unencapsulated 1000 pF Mica, in Series

C17, C18 — 0.039

µF

C21 — 10

µF/100 V Electrolytic

L1 — 2 Turns #16 AWG, 1/2

″ ID, 3/8″ Long

L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801

All capacitors ATC type 100/200 chips or equivalent unless otherwise noted.

R1, R2 — 10 Ohms/2.0 W Carbon

T1 — RF Transformer, 1:25 Impedance Ratio. See Motorola

R1

C5

C6

R2

DUT

C4

C1

C2

C3

L1

C7

RF

INPUT

RF

OUTPUT

+

–

0–6 V

+

–

50 V

C14

C15

C16

C17

C18

C19

L2

L3

C20

C21

C9

C10

C11

C12

C13

C8

T1