FQP3P20 datasheet(3/8 Pages) FAIRCHILD

부품명	FQP3P20

상세설명	200V P-Channel MOSFET

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제조업체	FAIRCHILD [Fairchild Semiconductor]

홈페이지	http://www.fairchildsemi.com

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3 / 8 page

Rev. A, April 2000

01

2345

67

0

2

4

6

8

10

12

V

DS = -100V

V

DS = -40V

V

DS = -160V

Note : I

D = -2.8 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

100

200

300

400

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

-V

DS, Drain-Source Voltage [V]

0.4

0.8

1.2

1.6

2.0

2.4

2.8

10

-1

10

0

10

1

25

150

Notes:

1. V

GS

= 0V

2. 250

sPulseTest

-V

SD , Source-Drain Voltage [V]

02

468

0

2

4

6

8

10

Note : T

J = 25

V

GS

= - 20V

V

GS = - 10V

-I

D , Drain Current [A]

24

68

10

-1

10

0

10

1

Notes:

1. V

DS = -40V

2. 250

s Pulse Test

-55

150

25

-V

GS , Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

-15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-6.0 V

Bottom: -5.5 V

Notes :

1. 250

s Pulse Test

2. T

C = 25

-V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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제조업체	부품명	데이터시트	상세설명
Kersemi Electronic Co.,...	KSMD5P20	1Mb / 8P	200V P-Channel MOSFET
Fairchild Semiconductor	FQAF12P20	615Kb / 8P	200V P-Channel MOSFET
Fairchild Semiconductor	FQB3P20	560Kb / 9P	200V P-Channel MOSFET
Unisonic Technologies	7P20	213Kb / 5P	200V P-CHANNEL MOSFET
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	FQP5P20	624Kb / 8P	200V P-Channel MOSFET
	FQA12P20	628Kb / 8P	200V P-Channel MOSFET
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Unisonic Technologies	7P20	213Kb / 6P	200V P-CHANNEL MOSFET
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