전자부품 데이터시트 검색엔진 |
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FQP6P25 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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FQP6P25 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2000 Fairchild Semiconductor International Rev. A, April 2000 048 12 16 20 24 0 2 4 6 8 10 12 V DS = -125V V DS = -50V V DS = -200V Note : I D = -6.0 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss -V DS, Drain-Source Voltage [V] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 -1 10 0 10 1 25 150 Notes: 1. V GS = 0V 2. 250 sPulseTest -V SD , Source-Drain Voltage [V] 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Note : T J = 25 V GS = - 20V V GS = - 10V -I D , Drain Current [A] 24 68 10 10 -1 10 0 10 1 Notes: 1. V DS = -40V 2. 250 s Pulse Test -55 150 25 -V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top : -15 V -10 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Notes : 1. 250 s PulseTest 2. T C = 25 -V DS , Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
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