전자부품 데이터시트 검색엔진 |
|
FQPF55N10 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
|
FQPF55N10 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page Rev. A, August 2000 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2000 Fairchild Semiconductor International Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.41mH, IAS = 34.2A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 55A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.1 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA VDS = 80 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 17.1 A -- 0.021 0.026 Ω gFS Forward Transconductance VDS = 40 V, ID = 17.1 A -- 34 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2100 2730 pF Coss Output Capacitance -- 640 830 pF Crss Reverse Transfer Capacitance -- 130 170 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 50 V, ID = 55 A, RG = 25 Ω -- 25 60 ns tr Turn-On Rise Time -- 250 510 ns td(off) Turn-Off Delay Time -- 110 230 ns tf Turn-Off Fall Time -- 140 290 ns Qg Total Gate Charge VDS = 80 V, ID = 55 A, VGS = 10 V -- 75 98 nC Qgs Gate-Source Charge -- 13 -- nC Qgd Gate-Drain Charge -- 36 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 34.2 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 136.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 34.2 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 55 A, dIF / dt = 100 A/µs -- 100 -- ns Qrr Reverse Recovery Charge -- 380 -- nC |
유사한 부품 번호 - FQPF55N10 |
|
유사한 설명 - FQPF55N10 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |