전자부품 데이터시트 검색엔진 |
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SI4113-D-GM 데이터시트(PDF) 8 Page - Silicon Laboratories |
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SI4113-D-GM 데이터시트(HTML) 8 Page - Silicon Laboratories |
8 / 36 page Si4133 8 Rev. 1.61 Table 5. RF and IF Synthesizer Characteristics (VDD = 2.7 to 3.6 V, TA = –40 to 85 °C) Parameter1 Symbol Test Condition Min Typ Max Unit XIN Input Frequency f REF 2— 26 MHz Reference Amplifier Sensitivity VREF 0.5 — VDD +0.3 V VPP Phase Detector Update Frequency f f= fREF/R 0.010 — 1.0 MHz RF1 VCO Center Frequency Range fCEN 947 — 1720 MHz RF1 VCO Tuning Range2 Extended frequency operation 1850 — 2050 MHz RF2 VCO Center Frequency Range fCEN 789 — 1429 MHz RF Tuning Range from fCEN Note: LEXT ±10% –5 — 5 % IF VCO Center Frequency Range fCEN 526 — 952 MHz IFOUT Tuning Range with IFDIV 62.5 — 1000 MHz IFOUT Tuning Range from fCEN Note: LEXT ±10% –5 — 5 % RF1 VCO Pushing Open loop — 500 — kHz/V RF2 VCO Pushing — 400 — kHz/V IF VCO Pushing — 300 — kHz/V RF1 VCO Pulling VSWR = 2:1, all phases, open loop — 400 — kHzPP RF2 VCO Pulling — 300 — kHzPP IF VCO Pulling — 100 — kHzPP RF1 Phase Noise 1 MHz offset — –132 — dBc/Hz RF1 Integrated Phase Error 10 Hz to 100 kHz — 0.9 — degrees rms RF2 Phase Noise 1 MHz offset — –134 — dBc/Hz RF2 Integrated Phase Error 10 Hz to 100 kHz — 0.7 — degrees rms IF Phase Noise 100 kHz offset — –117 — dBc/Hz IF Integrated Phase Error 100 Hz to 100 kHz — 0.4 — degrees rms Notes: 1. f = 200 kHz, RF1 = 1.6 GHz, RF2 = 1.2 GHz, IFOUT = 550 MHz, LPWR = 0, for all parameters unless otherwise noted. 2. Extended frequency operation only. VDD 3.0 V, QFN only, VCO Tuning Range fixed by directly shorting the RFLA and RFLB pins. See Application Note 41 for more details on the Si4133 extended frequency operation. 3. From powerup request (PWDN or SEN during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF synthesizers ready (settled to within 0.1 ppm frequency error). 4. From powerdown request (PWDN , or SENduring a write of 0 to bits PDIB and PDRB in Register 2) to supply current equal to IPWDN. |
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