STD95N3LLH6 datasheet(5/18 Pages) STMICROELECTRONICS

부품명	STD95N3LLH6

상세설명	N-channel 30 V, 0.0037 廓 , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET

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5 / 18 page

STx95N3LLH6

Electrical characteristics

Doc ID 15228 Rev 3

5/18

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD = 15 V, ID = 40 A,

RG = 4.7 Ω, VGS = 5 V

Figure 12

-

19

91

-

ns

td(off)

tf

Turn-off delay time

Fall time

VDD = 15 V, ID = 40 A,

RG = 4.7 Ω, VGS = 5 V

Figure 12

-

24.5

23.4

-

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

80

320

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 40 A, VGS = 0

-

1.1

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80 A,

di/dt = 100 A/µs,

VDD = 24 V

Figure 14

-

28.6

22.8

1.6

ns

nC

A

유사한 부품 번호 - STD95N3LLH6

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STD95N04	297Kb / 14P	N-CHANNEL 40V - 5.4mohm - 80A - DPAK - TO-220 STripFET Power MOSFET
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	STD95N2LH5	351Kb / 15P	N-channel 25 V, 0.0038 廓, 80 A - DPAK - IPAK STripFET??V Power MOSFET

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제조업체	부품명	데이터시트	상세설명
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유사한 설명 - STD95N3LLH6

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