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2SC1623-T1B-A 데이터시트(PDF) 3 Page - Renesas Technology Corp

부품명 2SC1623-T1B-A
상세설명  NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
SILICON TRANSISTOR
2SC1623
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D17115EJ5V0DS00 (5th edition)
Date Published November 2005 NS CP(K)
Printed in Japan
c
1984
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
• High DC Current Gain:
hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)
• High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cut-off Current
ICBO
0.1
μA
VCB = 60 V, IE = 0 A
Emitter Cut-off Current
IEBO
0.1
μA
VEB = 5.0 V, IC = 0 A
DC Current Gain
hFE
90
200
600
VCE = 6.0 V, IC = 1.0 mA
Note
Collector Saturation Voltage
VCE(sat)
0.15
0.3
V
IC = 100 mA, IB = 10 mA
Note
Base to Saturation Voltage
VBE(sat)
0.86
1.0
V
IC = 100 mA, IB = 10 mA
Note
Base to Emitter voltage
VBE
0.55
0.62
0.65
V
VCE = 6.0 V, IC = 1.0 mA
Note
Gain Bandwidth Product
fT
250
MHz
VCE = 6.0 V, IE =
−10 mA
Output Capacitance
Cob
3.0
pF
VCB = 6.0 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW
≤ 350
μs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Marking
L4
L5
L6
L7
hFE
90 to 180
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING (Unit: mm)
2.8 ± 0.2
1.5 TYP.
0.65
+0.1
–0.15
2
1
3
Marking
1: Emitter
2: Base
3: Collector
<R>
<R>


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