©2001 Fairchild Semiconductor Corporation

HUFA75321D3, HUFA75321D3S Rev. B

HUFA75321D3, HUFA75321D3S

20A, 55V, 0.036 Ohm, N-Channel UltraFET

Power MOSFETs

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET® process. This

advanced process technology

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

Formerly developmental type TA75321.

Features

• 20A, 55V

• Simulation Models

- Temperature Compensating PSPICE® and SABER™

Models

- Thermal Impedance SPICE and SABER Models

Available on the web at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUFA75321D3

TO-251AA

75321D

HUFA75321D3S

TO-252AA

75321D

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-251AA variant in tape and reel, e.g., HUFA75321D3ST.

D

G

S

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

Data Sheet

December 2001