IRF7341PbF

www.irf.com

5

1

10

100

0

200

400

600

800

1000

1200

V

, Drain-to-Source Voltage (V)

DS

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C

SHORTED

GS

iss

gs

gd ,

ds

rss

gd

oss

ds

gd

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

0

10

20

30

40

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

I =

D 4.5A

V

= 12V

DS

V

= 30V

DS

V

= 48V

DS

0.1

1

10

100

0.0001

0.001

0.01

0.1

1

10

100

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)