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IRLML6346TRPBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRLML6346TRPBF
상세설명  HEXFETPower MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRLML6346TRPBF 데이터시트(HTML) 2 Page - International Rectifier

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IRLML6346TRPbF
2
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D
S
G
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.02
–––
V/°C
–––
46
63
–––
59
80
VGS(th)
Gate Threshold Voltage
0.5
0.8
1.1
V
IDSS
–––
–––
1.0
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
3.9
–––
gfs
Forward Transconductance
9.5
–––
–––
S
Qg
Total Gate Charge
–––
2.9
–––
Qgs
Gate-to-Source Charge
–––
0.13
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
1.1
–––
td(on)
Turn-On Delay Time
–––
3.3
–––
tr
Rise Time
–––
4.0
–––
td(off)
Turn-Off Delay Time
–––
12
–––
tf
Fall Time
–––
4.9
–––
Ciss
Input Capacitance
–––
270
–––
Coss
Output Capacitance
–––
32
–––
Crss
Reverse Transfer Capacitance
–––
21
–––
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.2
V
trr
Reverse Recovery Time
–––
8.8
13
ns
Qrr
Reverse Recovery Charge
–––
2.7
4.1
nC
di/dt = 100A/μs
d
VGS = 12V
VGS = -12V
TJ = 25°C, IS = 3.4A, VGS = 0V d
integral reverse
p-n junction diode.
VDS = 10V, ID = 3.4A
ID = 3.4A
ID = 1.0A
TJ = 25°C, VR = 24V, IF=1.3A
MOSFET symbol
showing the
VDS =15V
Conditions
VGS = 4.5V
VGS = 0V
VDS = 24V
ƒ = 1.0MHz
RG = 6.8
VGS = 4.5V d
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 3.4A d
VDS = VGS, ID = 10μA
VDS =24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
RDS(on)
VGS = 2.5V, ID = 2.7A d
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
μA
m
VDD =15Vd
nA
nC
ns
pF
A
1.3
17
–––
–––
–––
–––


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