전자부품 데이터시트 검색엔진 |
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IRF540A 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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IRF540A 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ V DS = 100V Lower R DS(ON) : 0.041 (Typ.) Advanced Power MOSFET Thermal Resistance Junction-to-Case Case-to-Sink Junction-to-Ambient R JC R CS R JA /W Characteristic Max. Units Symbol Typ. FEATURES Absolute Maximum Ratings Drain-to-Source Voltage Continuous Drain Current (T C=25 ) Continuous Drain Current (T C=100 ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T C=25 ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Characteristic Value Units Symbol I DM V GS E AS I AR E AR dv/dt I D P D T J , TSTG T L A V mJ A mJ V/ns W W/ A V DSS V TO-220 1.Gate 2. Drain 3. Source 3 2 1 µ Ω O 1 O 2 O 3 ΟC ΟC O 1 O 1 ΟC ΟC ΟC ΟC ΟC θ θ θ IRF540A BV DSS = 100 V R DS(on) = 0.052 I D = 28 A 100 28 19.8 110 523 28 10.7 6.5 107 0.71 - 55 to +175 300 1.4 -- 62.5 -- 0.5 -- Ω 20 + _ ©1999 Fairchild Semiconductor Corporation Rev. B |
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