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L6562DTR 데이터시트(PDF) 4 Page - STMicroelectronics |
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L6562DTR 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 16 page L6562 4/16 (1) All parameters are in tracking (2) The multiplier output is given by: (3) Parameters guaranteed by design, functionality tested in production. Gv Voltage Gain Open loop 60 80 dB GB Gain-Bandwidth Product 1 MHz ICOMP Source Current VCOMP = 4V, VINV = 2.4 V -2 -3.5 -5 mA Sink Current VCOMP = 4V, VINV = 2.6 V 2.5 4.5 mA VCOMP Upper Clamp Voltage ISOURCE = 0.5 mA 5.3 5.7 6 V Lower Clamp Voltage ISINK = 0.5 mA (1) 2.12.252.4 V CURRENT SENSE COMPARATOR ICS Input Bias Current VCS = 0 -1 µA td(H-L) Delay to Outpu t 200 350 ns VCS clamp Current sense reference clamp VCOMP = Upper clamp 1.6 1.7 1.8 V VCSoffset Current sense offset VMULT = 0 30 mV VMULT = 2.5V 5 ZERO CURRENT DETECTOR VZCDH Upper Clamp Voltage IZCD = 2.5 mA 5.0 5.7 6.5 V VZCDL Lower Clamp Voltage IZCD = -2.5 mA 0.3 0.65 1 V VZCDA Arming Voltage (positive-going edge) (3) 2.1 V VZCDT Triggering Voltage (negative-going edge) (3) 1.6 V IZCDb Input Bias Current VZCD = 1 to 4.5 V 2µA IZCDsrc Source Current Capability -2.5 -5.5 mA IZCDsnk Sink Current Capability 2.5 mA VZCDdis Disable threshold 150 200 250 mV VZCDen Restart threshold 350 mV IZCDres Restart Current after Disable 30 75 µA STARTER tSTART Start Timer period 75 130 300 µs OUTPUT OVERVOLTAGE IOVP Dynamic OVP triggering current 35 40 45 µA Hys Hysteresis (3) 30 µA Static OVP threshold (1) 2.12.252.4 V GATE DRIVER VOH Dropout Voltage IGDsource = 20 mA 22.6 IGDsource = 200 mA 2.5 3 V VOL IGDsink = 200 mA 0.9 1.9 V tf Voltage Fall Time 30 70 ns tr Voltage Rise Time 40 80 ns VOclamp Output clamp voltage IGDsource = 5mA; Vcc = 20V 10 12 15 V UVLO saturation VCC = 0 to VCCon, Isink=10mA 1.1 V Table 5. Electrical Characteristics (continued) (Tj = -25 to 125°C, VCC = 12, CO = 1 nF; unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit V cs KV MUL T V CO MP 2.5 – () ⋅⋅ = |
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