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IRFS530A 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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IRFS530A 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page N-CHANNEL POWER MOSFET unless otherwise specified) Electrical Characteristics (T C=25 unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Characteristic Symbol Max. Units Typ. Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge g fs C iss C oss C rss t d(on) t r t d(off) t f Q g Q gs Q gd BV DSS BV/ T J V GS(th) R DS(on) I GSS I DSS V V/ V nA A pF ns nC -- -- -- -- -- -- -- -- -- -- -- -- -- V GS=0V,ID=250 A I D=250 A See Fig 7 V DS=5V,ID=250 A V GS=20V V GS=-20V V DS=100V V DS=80V,TC=150 V GS=10V,ID=5.35A V DS=40V,ID=5.35A V DD=50V,ID=14A, R G=12 See Fig 13 V DS=80V,VGS=10V, I D=14A See Fig 6 & Fig 12 Drain-to-Source Leakage Current V GS=0V,VDS=25V,f =1MHz See Fig 5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge I S I SM V SD t rr Q rr Characteristic Symbol Max. Units Typ. Min. Test Condition -- -- -- -- -- A V ns C Integral reverse pn-diode in the MOSFET T J=25 ,I S=10.7A,VGS=0V T J=25 ,I F=14A di F/dt=100A/ s ∆ ∆ ΟC Ω Ω µ O 4 O 5 ΟC µ µ ΟC O 4 O 4 O 4 O 4 O 1 Ω ΟC µ ΟC O 5 O 4 µ µ IRFS530A 100 -- 2.0 -- -- -- -- -- 0.11 -- -- -- -- -- 150 62 13 14 55 36 27 4.5 12.8 -- -- 4.0 100 -100 10 100 0.11 -- 790 175 72 40 40 110 80 36 -- -- 9.18 610 -- -- -- 109 0.41 10.7 56 1.5 -- -- Essentially Independent of Operating Temperature Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=3mH, I AS=10.7A, VDD=25V, RG=27 , Starting T J =25 I SD 14A, di/dt 350A/ s, V DD BV DSS , Starting T J =25 Pulse Test : Pulse Width = 250 s, Duty Cycle 2% Essentially Independent of Operating Temperature < _ < _ < _ < _ O 1 O 2 O 3 O 4 O 5 Ω oC oC µ µ |
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