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IRFW610B 데이터시트(Datasheet) 3 Page - Fairchild Semiconductor

부품명 IRFW610B
상세내용  200V N-Channel MOSFET
PDF  9 Pages
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제조사  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
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Rev. B, November 2001
©2001 Fairchild Semiconductor Corporation
024
68
0
2
4
6
8
10
12
V
DS = 100V
V
DS = 40V
V
DS = 160V
※ Note : I
D = 3.3 A
Q
G, Total Gate Charge [nC]
024
68
0
2
4
6
8
V
GS = 20V
V
GS = 10V
※ Note : T
J = 25
I
D, Drain Current [A]
24
68
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
oC
※ Notes :
1. V
DS
= 40V
2. 250μ s Pulse Test
V
GS, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom:
5.0 V
※ Notes :
1. 250μ s Pulse Test
2. T
C = 25
V
DS, Drain-Source Voltage [V]
10
-1
10
0
10
1
0
100
200
300
400
500
C
oss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※ Notes :
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
iss
V
DS, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
150℃
※ Notes :
1. V
GS = 0V
2. 250μ s Pulse Test
25℃
V
SD, Source-Drain voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics




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