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IRFW634B 데이터시트(Datasheet) 2 Page - Fairchild Semiconductor

부품명 IRFW634B
상세내용  250V N-Channel MOSFET
PDF  9 Pages
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제조사  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
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Rev. B, November 2001
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
©2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.9mH, IAS = 8.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.1A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300
µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
250
--
--
V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.27
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
--
--
10
µA
VDS = 200 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.05 A
--
0.345
0.45
gFS
Forward Transconductance
VDS = 40 V, ID = 4.05 A
--
7.6
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
780
1000
pF
Coss
Output Capacitance
--
95
125
pF
Crss
Reverse Transfer Capacitance
--
20
25
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 125 V, ID = 8.1 A,
RG = 25 Ω
--
15
40
ns
tr
Turn-On Rise Time
--
75
160
ns
td(off)
Turn-Off Delay Time
--
100
210
ns
tf
Turn-Off Fall Time
--
65
140
ns
Qg
Total Gate Charge
VDS = 200 V, ID = 8.1 A,
VGS = 10 V
--
29
38
nC
Qgs
Gate-Source Charge
--
4.2
--
nC
Qgd
Gate-Drain Charge
--
14
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.1
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
32.4
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 8.1 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 8.1 A,
dIF / dt = 100 A/µs
--
170
--
ns
Qrr
Reverse Recovery Charge
--
0.91
--
µC




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