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IRFW644B 데이터시트(Datasheet) 1 Page - Fairchild Semiconductor

부품명 IRFW644B
상세내용  250V N-Channel MOSFET
PDF  9 Pages
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제조사  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
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©2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converter and
switch mode power supplies.
Features
• 14A, 250V, RDS(on) = 0.28Ω @VGS = 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
IRFW644B / IRFI644B
Units
VDSS
Drain-Source Voltage
250
V
ID
Drain Current
- Continuous (TC = 25°C)
14
A
- Continuous (TC = 100°C)
8.9
A
IDM
Drain Current
- Pulsed
(Note 1)
56
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
480
mJ
IAR
Avalanche Current
(Note 1)
14
A
EAR
Repetitive Avalanche Energy
(Note 1)
13.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
139
W
- Derate above 25°C
1.11
W/°C
TJ, Tstg
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
0.9
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
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S
D
G
D2-PAK
IRFW Series
I2-PAK
IRFI Series
GS
D
GS
D




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