전자부품 데이터시트 검색엔진
Selected language     Korean  ▼
부품명
         상세내용
Preview PDF Download HTML-1page HTML-10pages

IRFW730 데이터시트(Datasheet) 2 Page - Fairchild Semiconductor

부품명 IRFW730
상세내용  400V N-Channel MOSFET
PDF  9 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo 

   
 2 page
background image
Rev. B, November 2001
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
©2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300
µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
400
--
--
V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.4
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
--
--
10
µA
VDS = 320 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.75 A
--
0.83
1.0
gFS
Forward Transconductance
VDS = 40 V, ID = 2.75 A
--
4.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
790
1000
pF
Coss
Output Capacitance
--
80
100
pF
Crss
Reverse Transfer Capacitance
--
20
26
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 200 V, ID = 5.5 A,
RG = 25 Ω
--
15
40
ns
tr
Turn-On Rise Time
--
55
120
ns
td(off)
Turn-Off Delay Time
--
85
180
ns
tf
Turn-Off Fall Time
--
50
110
ns
Qg
Total Gate Charge
VDS = 320 V, ID = 5.5 A,
VGS = 10 V
--
25
33
nC
Qgs
Gate-Source Charge
--
4.3
--
nC
Qgd
Gate-Drain Charge
--
11
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
22
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 5.5 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 5.5 A,
dIF / dt = 100 A/µs
--
265
--
ns
Qrr
Reverse Recovery Charge
--
2.32
--
µC




Html 페이지

1  2  3  4  5  6  7  8  9 


데이터시트



관련 부품명

부품명상세내용Html View제조사
FQD2N40400V N-Channel MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
FQPF11N40400V N-Channel MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRF740B400V N-Channel MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRFF3303.5A 400V 1.000 Ohm N-Channel Power MOSFET 1 2 3 4 5 MoreIntersil Corporation
FQPF17N40400V N-Channel MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRFP340B400V N-Channel MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRFP34011A 400V 0.550 Ohm N-Channel Power MOSFET 1 2 3 4 5 MoreIntersil Corporation
FQD3N40400V N-Channel MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
FQPF2N40400V N-Channel MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRFR310B400V N-Channel MOSFET 1 2 3 4 5 MoreFairchild Semiconductor

링크 URL

ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl