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IRFWI510A 데이터시트(Datasheet) 3 Page - Fairchild Semiconductor

부품명 IRFWI510A
상세내용  Advanced Power MOSFET
PDF  7 Pages
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제조사  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
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 3 page
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N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
IRFW/I510A
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
µs Pulse Test
2. T
C
= 25
oC
V
GS
Top :
15V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
Bottom : 4.5 V
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
25
oC
175
oC
- 55
oC
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 40 V
3. 250
µs Pulse Test
V
GS
, Gate-Source Voltage [V]
0
5
10
15
20
0.0
0.2
0.4
0.6
0.8
@ Note : T
J
= 25
oC
V
GS
= 20 V
V
GS
= 10 V
I
D
, Drain Current [A]
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
-1
10
0
10
1
175
oC
25
oC
@ Notes :
1. V
GS
= 0 V
2. 250
µs Pulse Test
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
70
140
210
280
350
C
iss= Cgs+ Cgd ( Cds= shorted )
C
oss
= C
ds
+ C
gd
C
rss= Cgd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS
, Drain-Source Voltage [V]
0
2
4
6
8
10
0
5
10
V
DS
= 80 V
V
DS
= 50 V
V
DS = 20 V
@ Notes : I
D = 5.6 A
Q
G
, Total Gate Charge [nC]




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