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IRFWI540A 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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IRFWI540A 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page IRFW/I540A 100 -- 2.0 -- -- -- -- -- 0.11 -- -- -- -- -- 325 148 18 18 90 56 60 10.8 27.9 -- -- 4.0 100 -100 10 100 0.052 -- 1710 380 170 50 50 180 120 78 -- -- 22.56 1320 -- -- -- 132 0.63 28 110 1.5 -- -- Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=1mH, I AS=28A, VDD=25V, RG=27Ω, Starting TJ =25℃ ③ I SD≤28A, di/dt≤400A/μs, VDD≤BVDSS , Starting TJ =25℃ ④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature 2 N-CHANNEL POWER MOSFET Electrical Characteristics (T C=25℃ unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Characteristic Symbol Max. Units Typ. Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(밠iller? Charge g FS C iss C oss C rss t d(on) t r t d(off) t f Q g Q gs Q gd BV DSS ΔBV/ΔT J V GS(th) R DS(on) I GSS I DSS V V/℃ V nA μA Ω S pF ns nC -- -- -- -- -- -- -- -- -- -- -- -- -- V GS=0V,ID=250μA I D=250μA See Fig 7 V DS=5V,ID=250μA V GS=20V V GS=-20V V DS=100V V DS=80V,TC=150℃ V GS=10V,ID=14A ④ V DS=40V,ID=14A ④ V DD=50V,ID=28A, R G=9.1Ω See Fig 13 ④⑤ V DS=80V,VGS=10V, I D=28A See Fig 6 & Fig 12 ④⑤ Drain-to-Source Leakage Current V GS=0V,VDS=25V,f =1MHz See Fig 5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current ① Diode Forward Voltage ④ Reverse Recovery Time Reverse Recovery Charge I S I SM V SD t rr Q rr Characteristic Symbol Max. Units Typ. Min. Test Condition -- -- -- -- -- A V ns μC Integral reverse pn-diode in the MOSFET T J=25℃,IS=28A,VGS=0V T J=25℃,IF=28A di F/dt=100A/μs ④ |
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