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CSD17556Q5B 데이터시트(PDF) 2 Page - Texas Instruments |
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CSD17556Q5B 데이터시트(HTML) 2 Page - Texas Instruments |
2 / 12 page CSD17556Q5B SLPS392 – MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, IDS = 250μA 30 V IDSS Drain to Source Leakage Current VGS = 0V, VDS = 24V 1 μA IGSS Gate to Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, IDS = 250μA 1.15 1.4 1.65 V VGS = 4.5V, IDS = 40A 1.5 1.8 m Ω RDS(on) Drain to Source On Resistance VGS = 10V, IDS = 40A 1.2 1.4 m Ω gfs Transconductance VDS = 15V, IDS = 40A 197 S Dynamic Characteristics Ciss Input Capacitance 5400 7020 pF VGS = 0V, VDS = 15V, Coss Output Capacitance 1770 2310 pF f = 1MHz Crss Reverse Transfer Capacitance 68 88 pF RG Series Gate Resistance 0.7 1.4 Ω Qg Gate Charge Total (4.5V) 30 39 nC Qgd Gate Charge Gate to Drain 7.5 nC VDS = 15V, IDS = 40A Qgs Gate Charge Gate to Source 11 nC Qg(th) Gate Charge at Vth 6.1 nC Qoss Output Charge VDS = 15V, VGS = 0V 48 nC td(on) Turn On Delay Time 14 ns tr Rise Time 26 ns VDS = 15V, VGS = 4.5V, IDS = 40A,RG = 2Ω td(off) Turn Off Delay Time 27 ns tf Fall Time 12 ns Diode Characteristics VSD Diode Forward Voltage ISD = 40A, VGS = 0V 0.8 1 V Qrr Reverse Recovery Charge 68 nC VDD= 15V, IF = 40A, di/dt = 300A/μs trr Reverse Recovery Time 36 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER MIN TYP MAX UNIT RθJC Thermal Resistance Junction to Case(1) 1.3 °C/W RθJA Thermal Resistance Junction to Ambient(1)(2) 50 °C/W (1) RθJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD17556Q5B |
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