CSD25213W10 datasheet(4/12 Pages) TI

부품명	CSD25213W10

상세설명	P-Channel NexFET Power MOSFET

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제조업체	TI [Texas Instruments]

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4 / 12 page

0.5

0.6

0.7

0.8

0.9

1

1.1

−75

−25

25

75

125

175

TC - Case Temperature (ºC)

ID = −250uA

G001

20

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0

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− V

GS - Gate-to- Source Voltage (V)

TC = 25°C Id = −1A

TC = 125ºC Id = −1A

G001

0

0.5

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1.5

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2.5

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3.5

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0.8

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1.2

1.4

1.6

1.8

2

2.2

Qg - Gate Charge (nC)

ID = −1A

VDS =−10V

G001

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450

0

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− V

DS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

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− V

DS - Drain-to-Source Voltage (V)

VGS = −4.5V

VGS = −2.5V

VGS = −1.8V

G001

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− V

GS - Gate-to-Source Voltage (V)

TC = 125°C

TC = 25°C

TC = −55°C

VDS = −5V

G001

CSD25213W10

SLPS443 – JUNE 2013

www.ti.com

TYPICAL MOSFET CHARACTERISTICS (continued)

(TA = 25°C unless otherwise stated)

TEXT ADDED FOR SPACING

Figure 2. Saturation Characteristics

Figure 3. Transfer Characteristics

TEXT ADDED FOR SPACING

Figure 4. Gate Charge

Figure 5. Capacitance

TEXT ADDED FOR SPACING

Figure 6. Threshold Voltage vs. Temperature

Figure 7. On-State Resistance vs. Gate-to-Source Voltage

4

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