전자부품 데이터시트 검색엔진 |
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IRLM120A 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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IRLM120A 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page IRLM120A 10 -1 10 0 10 1 10 -1 10 0 10 1 @ Notes : 1. 250 µs Pulse Test 2. T C = 25 oC V GS Top : 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V Bottom : 3.0V V DS , Drain-Source Voltage [V] 0 1020 3040 0.0 0.1 0.2 0.3 0.4 @ Note : T J = 25 oC V GS = 10 V V GS = 5 V I D , Drain Current [A] 024 68 10 12 0 2 4 6 V DS = 80 V V DS = 50 V V DS = 20 V @ Notes : I D = 9.2 A Q G , Total Gate Charge [nC] 02 46 8 10 10 -1 10 0 10 1 25 oC 150 oC - 55 oC @ Notes : 1. V GS = 0 V 2. V DS = 40 V 3. 250 µs Pulse Test V GS , Gate-Source Voltage [V] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 10 -1 10 0 10 1 150 oC 25 oC @ Notes : 1. V GS = 0 V 2. 250 µsPulseTest V SD , Source-Drain Voltage [V] 10 0 10 1 0 120 240 360 480 600 C iss= Cgs+ Cgd ( Cds= shorted ) C oss= Cds+ Cgd C rss= Cgd @ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS , Drain-Source Voltage [V] 3 N-CHANNEL POWER MOSFET Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current |
유사한 부품 번호 - IRLM120A |
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유사한 설명 - IRLM120A |
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