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IRLM120A 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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IRLM120A 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page IRLM120A 100 -- 1.0 -- -- -- -- -- 0.09 -- -- -- -- -- 90 39 5 10 19 9 10.2 1.7 6.0 -- -- 2.0 100 -100 10 100 0.22 -- 440 115 50 20 30 50 30 15 -- -- 4.6 340 -- -- -- 98 0.34 2.3 18 1.5 -- -- Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=30mH, I AS=2.3A, VDD=25V, RG=27Ω, Starting TJ =25 oC ③ I SD < 9.2A, di/dt < 300A/μs, VDD < BVDSS , Starting TJ =25 oC ④ Pulse Test : Pulse Width = 250 µs, Duty Cycle < 2% ⑤ Essentially Independent of Operating Temperature 2 N-CHANNEL POWER MOSFET Electrical Characteristics (T C=25 oC unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Characteristic Symbol Max. Units Typ. Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge g fs C iss C oss C rss t d(on) t r t d(off) t f Q g Q gs Q gd BV DSS ∆BV/∆T J V GS(th) R DS(on) I GSS I DSS V V/ o C V nA µA Ω pF ns nC -- -- -- -- -- -- -- -- -- -- -- -- -- V GS=0V,ID=250µA I D=250µA See Fig 7 V DS=5V,ID=250µA V GS=20V V GS=-20V V DS=100V V DS=80V,TC=125 o C V GS=5V,ID=1.15A (4) V DS=40V,ID=1.15A (4) V DD=50V,ID=9.2A, R G=9 Ω See Fig 13 (4)(5) V DS=80V,VGS=5V, I D=9.2A See Fig 6 & Fig 12 (4)(5) Drain-to-Source Leakage Current V GS=0V,VDS=25V,f =1MHz See Fig 5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current (1) Diode Forward Voltage (4) Reverse Recovery Time Reverse Recovery Charge I S I SM V SD t rr Q rr Characteristic Symbol Max. Units Typ. Min. Test Condition -- -- -- -- -- A V ns µC Integral reverse pn-diode in the MOSFET T J=25 o C,I S=2.3A,VGS=0V T J=25 o C,I F=9.2A di F/dt=100A/µs (4) |
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