IRLS630A

200

--

1.0

--

--

--

--

--

0.18

--

--

--

--

--

90

44

8

6

30

9

18.6

3.5

8.3

--

--

2.0

100

-100

10

100

0.4

--

755

115

55

25

20

70

30

27

--

--

4.5

580

--

--

--

158

0.78

9

32

1.5

--

--

Notes ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② L=2mH, I

③ I

④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%

⑤ Essentially Independent of Operating Temperature

N-CHANNEL

POWER MOSFET

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain(＂Miller＂) Charge

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

BV

DSS

ΔBV/ΔT

J

V

GS(th)

R

DS(on)

I

GSS

I

DSS

V

V/℃

V

nA

μA

Ω

S

pF

ns

nC

--

--

--

--

--

--

--

--

--

--

--

--

--

V

I

See Fig 7

V

V

V

V

V

V

④

V

④

V

R

See Fig 13

④⑤

V

I

Drain-to-Source Leakage Current

V

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

①

Diode Forward Voltage

④

Reverse Recovery Time

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

Q

rr

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

--

--

--

--

--

A

V

ns

μC

Integral reverse pn-diode

in the MOSFET

T

T

di

④