전자부품 데이터시트 검색엔진 |
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BD138 데이터시트(PDF) 1 Page - Comset Semiconductor |
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BD138 데이터시트(HTML) 1 Page - Comset Semiconductor |
1 / 3 page NPN BD136 – BD138 – BD140 15/10/2012 COMSET SEMICONDUCTORS 1 | 3 SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD136-BD138-BD140 are PNP Transistors They are recommended for driver stages in hi-fi amplifiers and television circuits. They are mounted in Jedec TO-126 plastic package. NPN complements are BD135-BD137-BD139. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -VCBO Collector-Base Voltage (IE= 0) BD135 45 V BD137 60 BD139 100 -VCEO Collector-Emitter Voltage (IB= 0) BD135 45 V BD137 60 BD139 80 -VCER Collector-Emitter Voltage (RBE= 1 kΩ) BD135 45 V BD137 60 BD139 100 -VEBO Emitter-Base Voltage (IE= 0) 5 V -IC Collector Current -IC 1.5 A -ICM 2 -IB Base current 0.5 A PT Total power Dissipation @ Tmb = 70°C 8 Watts TJ Junction Temperature 150 °C TStg Storage Temperature -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-mb Thermal Resistance, Junction to mouting base 10 K/W RthJ-a Thermal Resistance, Junction to ambient in free air 100 K/W |
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