BD142_12 datasheet(1/2 Pages) COMSET

부품명	BD142

상세설명	NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS

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제조업체	COMSET [Comset Semiconductor]

홈페이지	http://comset.halfin.com

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1 / 2 page

BD142

18/10/2012

COMSET SEMICONDUCTORS

1/2

NPN SILICON TRANSISTOR

POWER LINERAR AND SWITCHING APPLICATIONS

LF Large Signal Power Amplification

Low Saturation Voltage

High Dissipation Rating

Intended for a wide variety of intermediate-power applications.

It is especially suited for use in audio and inverter circuits at 12 volts.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCEO

Collector-Emitter Voltage

45

V

VCBO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

7

V

VCEX

Collector-Emitter Voltage

VBE=-1.5 V

50

V

IC

Collector Current

15

A

IB

Base Current

7

A

PT

Power Dissipation

@ TC = 25°

117

Watts

TJ

Junction Temperature

-65 to +200

°C

TS

Storage Temperature

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-C

Thermal Resistance, Junction to Case

1.5

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(BR)

Collector-Emitter Breakdown Voltage (*)

IC=200 mA, IB=0

45

V

VCEX(BR)

Collector-Emitter Breakdown Voltage (*)

IC=100 mA, VBE=-1.5 V

50

V

VCE(SAT)

Collector-Emitter Saturation Voltage (*)

IC=4 A, IB=0.4 A

-

1.1

V

ICEX

Collector-Emitter Cutoff Current

VCE= 40 V, VBE=-1.5 V

-

2

mA

IEBO

Emitter-Base Cutoff Current

VEB=7 V

-

1

mA

VBE

Base-Emitter Voltage (*)

IC=4.0 A, VCE=4.0V

-

1.5

V

IS/B

Second Breakdown collector current

t=1s, VCE=39 V

3

-

A

hFE

Static Forward Current Transfer Ratio (*)

VCE=4.0 V, IC=4.0 A

12.5

-

160

-

VCE=4.0 V, IC=0.5 A

20

-

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

유사한 부품 번호 - BD142_12

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BD142 데이터시트(PDF) 1 Page - Comset Semiconductor

BD142 데이터시트(HTML) 1 Page - Comset Semiconductor

유사한 부품 번호 - BD142_12

유사한 설명 - BD142_12

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