전자부품 데이터시트 검색엔진 |
|
BDY57 데이터시트(PDF) 2 Page - Comset Semiconductor |
|
BDY57 데이터시트(HTML) 2 Page - Comset Semiconductor |
2 / 3 page NPN BDY57 – BDY58 09/11/2012 COMSET SEMICONDUCTORS 2 | 3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=100 mA, IB=0 BDY57 80 - - V BDY58 125 - - V(BR)CBO Collector-Base Breakdown Voltage (*) IC=5.0mA, IE=0 BDY57 120 - - V BDY58 160 - - V(BR)EBO Emitter-Base Breakdown Voltage (*) IE=5.0 A, IC=0 BDY57 - 0.5 1.4 V BDY58 ICBO Collector-Base Cutoff Current VCB=120 V, IE=0 V BDY57 - - 1.0 mA BDY58 - - 0.5 ICER Collector-Emitter Cutoff Current VCE=80 V, RBE=10 TCASE=100°C BDY57 - - 10 mA BDY58 IEBO Emitter-Base Cutoff Current VEB=10 V, IC=0 V BDY57 - 0.25 0.5 mA BDY58 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=1.0 A BDY57 - 0.5 1.4 V BDY58 h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=10 A BDY57 20 - 60 V BDY58 VCE=4 V, IC=20 A BDY57 - 15 - BDY58 VCE=4 V, IC=10 A TCASE=-30°C BDY57 10 - - BDY58 fT Transition Frequency VCE=15 V, IC=1.0 A f=10 MHz BDY57 10 30 - MHz BDY58 td + tr Turn-on time IC=15 A, IB=1.5 A BDY57 - 0.25 1 µs BDY58 ts + tf Turn-off time IC=15 A, IB1=1.5 A IB2=-1.5 A BDY57 - 1 2 µs BDY58 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
유사한 부품 번호 - BDY57_12 |
|
유사한 설명 - BDY57_12 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |