BCP53-16T3G datasheet(4/5 Pages) ONSEMI

부품명	BCP53-16T3G

상세설명	PNP Silicon Epitaxial Transistors

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Qg, TOTAL GATE CHARGE (nC)

1

0.8

0.6

0.4

0.2

0

1

2

3

4

5

Figure 9. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

1.2

1.0

0.8

0.6

0.4

0.2

0.01

1

10

TJ = 25°C

ID = 0.25 A

20

16

12

8

4

0

10

20

30

40

Ciss

Coss

Crss

TJ = 25°C

VGS = 0 V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

TJ = 85°C

VGS = 0 V

0.1

유사한 부품 번호 - BCP53-16T3G

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	BCP53-16T3G	100Kb / 5P	PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT September, 2013 ??Rev. 10
	BCP53-16T3G	85Kb / 5P	PNP Silicon Epitaxial Transistors September, 2013 ??Rev. 10
	BCP53-16T3G	76Kb / 5P	PNP Silicon Epitaxial Transistors December, 2015 ??Rev. 12

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유사한 부품 번호 - BCP53-16T3G

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